The influence of various plasma species on the growth and structural properties of indium nitride in migration-enhanced plasma-assisted metalorganic chemical vapor deposition (MEPA-MOCVD). The atomic nitrogen ions’ flux has been found to have a significant effect on the growth rate as well as the crystalline quality of indium nitride. No apparent effect of atomic neutrals, molecular ions, and neutral nitrogen molecules has been observed on either the growth rate or crystalline quality. A thermodynamic supersaturation model for plasma-assisted metalorganic chemical vapor deposition of InN has also been developed. The model is based on the chemical combination of indium with plasma-generated atomic nitrogen ions. In supersaturation was analyzed for indium nitride films grown by PA-MOCVD with varying input flow of indium precursor. Raman spectroscopy, X-ray diffraction, and atomic force microscopy provided feedback on structural properties and surface morphology of grown films. We found that InN films grown at widely different growth conditions but with the same supersaturation exhibit similar structural properties and surface morphology. The effect of various growth parameters on the plasma potential has also been discussed. The plasma potential has been found to depend on the concentration of atomic nitrogen ions. The samples grown at increased plasma potential have exhibited better optoelectronic properties than those grown at lower plasma potential.