Author ORCID Identifier
https://orcid.org/0000-0003-2044-0698
Date of Award
5-4-2020
Degree Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
Department
Physics and Astronomy
First Advisor
Alexander Kozhanov
Second Advisor
Nikolaus Dietz
Third Advisor
Vadym Apalkov
Fourth Advisor
Douglas Gies
Fifth Advisor
Sidong Lei
Abstract
In this thesis I document the growth of InN above accepted decomposition temperatures of 630°C and discuss the analysis of the Fourier-transform infrared spectroscopy measurements of InN properties. InN films were grown by MEPA-MOCVD at growth temperatures ranging from 700 to 957 °C. The evidence of InN presence in grown films is presented from infrared spectroscopy, X-ray diffraction studies, Raman spectroscopy, and atomic force microscopy. The data and previous studies indicate polycrystalline grainy InN film partially with dominant epitaxial material crystallographically locked to the substrate. The mathematical modelling of infrared reflectance and comparison with data is performed for non-polarized light. A model is applied to extract thickness, carrier concentration and phonon frequencies for InN film grown on sapphire. The developed model can be refined to analyze other III-Nitride materials, including multilayer heterostructures as the optoelectronic calculations are similar for this class of material.
DOI
https://doi.org/10.57709/17466223
Recommended Citation
Cross, Garnett, "Optoelectronic and Transport Properties of Indium Nitride." Dissertation, Georgia State University, 2020.
doi: https://doi.org/10.57709/17466223
File Upload Confirmation
1