Date of Award

5-26-2006

Degree Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

Department

Physics and Astronomy

First Advisor

Nikolaus Dietz - Chair

Second Advisor

Brian Thoms

Third Advisor

Mark Stockman

Fourth Advisor

Vadym Apalkov

Fifth Advisor

Douglas Gies

Abstract

The development of next generation devices for high speed switching, high efficiency energy conversion, spintronic devices require the development of advanced material systems. While conventional group IV, group II-VI and group III-V based materials systems have served as a base material in many modern device structures, they posses fundamental materials properties that limit their suitability in next generation device structures. The group III-N material system is very promising for the development of advanced device structures. GaN is currently widely used in high efficiency lighting applications. However, the development of this material system has been limited to material systems with limited indium. The growth of high indium concentration materials such as InN and GaxIn1-xN has proven difficulty due to the high thermal decomposition pressure of InN. In response to this difficulty, a high pressure chemical vapor deposition reactor system has been developed for the growth of InN which enables elevated processing temperatures as compared to conventional low-pressure growth techniques. The design criteria and implementation of this unique design is presented here. In addition, the results of in-situ real time optical characterization capabilities of this reactor system are presented as applied to thermal characterization, flow dynamics, gas phase kinetics and surface reactions. Ex-situ InN thin films grown on sapphire substrates and GaN epilayers have been analyzed by x-ray diffraction, transmission spectroscopy and raman spectroscopy. These results indicated single crystal indium nitride films with an optical absorption edge which varies between 0.7 and 1.9 eV as a function of precursor flow stoichiometry.

DOI

https://doi.org/10.57709/1059808

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