Polarization Rotation Study of Microwave Induced Magnetoresistance Oscillations in the GaAs/AlGaAs 2D System

Author

Han-Chun LiuFollow

Date of Award

12-15-2016

Degree Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

Department

Physics and Astronomy

First Advisor

Ramesh Mani

Second Advisor

Vadym Apalkov

Third Advisor

Zhigang Jiang

Fourth Advisor

Alexander Kozhanov

Fifth Advisor

Unil Perera

Abstract

Previous studies have demonstrated the sensitivity of the amplitude of the microwave radiation-induced magnetoresistance oscillations to the microwave polarization. These studies have also shown that there exists a phase shift in the linear polarization angle dependence. But the physical origin of this phase shift is still unclear. Therefore, the first part of this dissertation analyzes the phase shift by averaging over other small contributions, when those contributions are smaller than experimental uncertainties. The analysis indicates nontrivial frequency dependence of the phase shift. The second part of the dissertation continues the study of the phase shift and the results suggest that the specimen exhibits only one preferred radiation orientation for different Hall-bar sections. The third part of the dissertation summarizes our study of the Hall and longitudinal resistance oscillations induced by microwave frequency and dc bias at low filling factors. Here, the phase of these resistance oscillations depends on the contact pair on the device, and the period of oscillations appears to be inversely proportional to radiation frequency.

DOI

https://doi.org/10.57709/9440397

Recommended Citation

Liu, Han-Chun, "Polarization Rotation Study of Microwave Induced Magnetoresistance Oscillations in the GaAs/AlGaAs 2D System." Dissertation, Georgia State University, 2016.
doi: https://doi.org/10.57709/9440397